FRC CSC RAS, CMC MSU, MERI, MAI
OCT
19-20
2020
The conference will be held online on October 19-20, 2020.
Authors presenting their work at conference are cordially invited to contribute an Original Paper or Topical Review to the Conference Proceedings, sending the text and filled submission form and a document confirming the possibility of publishing in open press to the e-mail address matmodel2013@gmail.com
The publication must reflect the relevance, novelty, purpose, procedure and research results, conclusions. The text of the publication must include the title, short annotation and keywords.
Abstracts should be sent for review before October 3.
Texts of articles for publication in journals should be sent for review before October 10.
Abstracts and full-text articles are accepted in Microsoft Word format. Abstract should be up to three full pages of A4. The article should be 6-7 pages. Design rules: margins on all sides 25 mm, font Times New Roman, size 12pt, one line and a half spacing. Formulas should be typed in Microsoft Equation or MathType.
Participants should send their registration data to the e-mail address matmodel2013@gmail.com before October 16.
Organizers:
The release of the Conference Materials is planned, with placement in the RSCI and assignment of DOI.
The best works will be published in a special issue of the journal Izvestiya Vuzov. Materials of electronic equipment for 2020 (VAK). Articles submitted before September 1 will be published in issue 3. Articles sent later will be published in issue 4.
Some of them will be published in Russian Microelectronics and Phys.st.sol. (B) journals (WoS, Scopus).
Prof. Dr. Sobolev N.A., University of Aveiro, Portugal
Prof. Dr. Pedro J.C., University of Aveiro, Portugal
Corresponding Member RAS Dvurechenskii A.V., Rzhanov Institute of Semiconductor Physics SB RAS
Prof. Dr. Vasilevskiy M.I., University of Minho, Portugal
Prof. Dr. Petrov P., Imperial Colledge London, Great Britain
Participants
Speakers
October 19
Registration
Opening
Plenary session
Section D. Modeling of dimensional, radiation, surface and another defects in semiconductor electronics
Section C. Mathematical modeling in structural materials science (multilevel models, multiscale models, simulation models etc.)
October 20
Plenary session
Section A. Modern problems of creating a research infrastructure for the synthesis of new materials with desired properties, including the use of new methods and tools for analyzing big data
Section F. Structures and properties of composite materials modeling with nanocrystals, nanoclusters, nano-amorphous inclusions, etc.
Section B. Problems of the development of materials science of quantum electronic heterostructures
Section E. Work of multi-level memory elements modeling for next-generation computers
Conference closing
ProgramSection A.
Section C.
Section E.
Chair:
Academician RAS Evtushenko Y.G., FRC CSC RAS, Moscow, Russia
Vice-chair:
Doctor of Physical and Mathematical Sciences Abgaryan K.K., FRC CSC RAS, Moscow, Russia
Program Committee:
Academician RAS Sokolov I.A., FRC CSC RAS, Moscow, Russia
Doctor of Technical Sciences Zatsarinny A.A., FRC CSC RAS, Moscow, Russia
Academician RAS Krasnikov G.Y., JSC MERI, Zelenograd, Russia
Corresponding Member RAS Lukichev V.F., PTIAS RAS, Moscow, Russia
Corresponding Member RAS Flerov Y.A., FRC CSC RAS, Moscow, Russia
Corresponding Member RAS Pospelov I.G., FRC CSC RAS, Moscow, Russia
Corresponding Member RAS Kveder V.V., ISSP RAS, Chernogolovka, Russia
Doctor of Technical Sciences Gamkrelidze S.A., IUHFSE RAS, Moscow, Russia
Corresponding Member RAS Dvurechenskii A.V., ISP SO RAS, Novosibirsk, Russia
Prof. Dr. Sobolev N.A., University of Aveiro, Portugal
Doctor of Physical and Mathematical Sciences Reviznikov D.L., MAI, Moscow, Russia
Doctor of Physical and Mathematical Sciences Ilyushin A.S., MSU, Faculty of Physics, Moscow, Russia
Corresponding Member RAS Gornev E.S., JSC MERI, Zelenograd, Russia
Doctor of Physical and Mathematical Sciences Italyantsev A.G., JSC MERI, Zelenograd, Russia
Doctor of Physical and Mathematical Sciences Tishkin V.F., IAM RAS, Moscow, Russia
Doctor of Technical Sciences Zakharov V.N., FRC CSC RAS, Moscow, Russia
Professor Doctor Kotomin E., Max Planck Institute for Solid State Research, Stuttgart, Germany, Institute of Solid State Physics, University of Latvia, Riga, Latvia
Chair:
Doctor of Technical Sciences Zatsarinny A.A., FRC CSC RAS, Moscow, Russia
Vice-chair:
Doctor of Physical and Mathematical Sciences Abgaryan K.K., FRC CSC RAS, Moscow, Russia
Organizing Committee:
Doctor of Technical Sciences Kharchenko V.A., FRC CSC RAS, Moscow, Russia
Ph.D., Physical and Mathematical Sciences Kolbin I.S., FRC CSC RAS, Moscow, Russia
Prof. Dr. Mendes H.F., University of Aveiro, Portugal
Ph.D., Physical and Mathematical Sciences Bazhanov D.I., MSU, Faculty of Physics, Moscow, Russia
Ph.D., Technical Sciences Telminov O.A., JSC MERI, Zelenograd, Russia
Ph.D., Technical Sciences Stepchenkov Y.A., FRC CSC RAS, Moscow, Russia
Ph.D., Physical and Mathematical Sciences Mutigullin I.V., FRC CSC RAS, Moscow, Russia
Ph.D., Physical and Mathematical Sciences Zanaveskin M.L., NRC "Kurchatov Institute", Moscow, Russia
Gavrilov E.S., MAI, Moscow, Russia
Uvarov S.I., FRC CSC RAS, Moscow, Russia
Secretariat of the Organizing Committee:
Uvarova O.V., FRC CSC RAS, Moscow, Russia
Sechenyh P.A., FRC CSC RAS, Moscow, Russia
